Pii: S0022-0248(99)00417-0

In this article, we report the growth and characterization of InAsP/InP strained single quantum well (SSQW), strained single quantum well (SSQW) stack, and strained multiple quantum well (SMQW) structures on (1 0 0)-oriented InP substrates grown by metalorganic chemical vapor deposition. Double-crystal X-ray di!raction, photoluminescence (PL) and transmission electron microscope (TEM) are used to characterize the strained quantum wells. The high-quality crystalline InAs y P 1~y (72As )/InP SSQW structure with y)0.36 exhibits a 9.9 meV full-width at half-maximum (FWHM) of 10 K PL spectra. The peaks in the PL spectra for SSQW stack structure with a well thickness of 8, 14, and 35 As vanish above 100, 150, and 296 K, respectively, presumably due to the decrease of photons yielded by electron}hole recombination in thinner quantum well regions on increasing the temperature. The PL peak emission energy dependence of well thickness in the InAsP/InP SSQW stack structure is in good agreement with the calculated results. In addition, the variations of the PL peak energy and FWHM in all the InAsP/InP SSQW, SSQW stack, and SMQW structures are described in detail. ( 2000 Elsevier Science B.V. All rights reserved.